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The rules of Nuclear Magnetism
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75)/Si FeFET with L = 10 μm and W = 200 μm. Thicknesses in the gate stack were 200 nm Pt, 400 nm SBT and 13 nm HAO. b Vw − VSA extracted from the Id–Vg curves for various VSA. Modified from [11] Fig. 3 x dependence of static memory window at Vg = ±6 V of n-channel Pt/SBT/HAO(x)/Si FeFETs. Thicknesses in the gate stack were 200 nm Pt, 400 nm SBT and 14 nm HAO(x). The gate area sizes were L = 10 μm and W = 200 μm. Modified from [15] Fig. 8. Static memory window (Vw) of an FeFET was defined as a difference between two threshold voltage (Vth) values in the Id–Vg loop which were regarded as the Vg values at Id = 10−6 A for simplification in this work.