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Onida, and L. Reining, Phys. Rev. B55, 10278 (1997). ” B. Kralik, E. K. Chang, and S. G. Louie, Phys. Rev. B57,7027 (1998). ’13 M. Palummo, L. Reining, M. Meyer, and C. M. Bertoni, 2 n d International Conference on the Physics of Semiconductors, vol. 1, ed. D. J. Lockwood, World Scientific, Singapore (1995), ” 56 161. 30 for further discussions of this point. 5 follow Ref. 4 closely. However, we do not consider the spin degrees of freedom explicitly. We add infinitesimal convergence factors f is to Ei for Ei 2 p.
31). Also, the dynamical response of an electron to fluctuations in the density n(r) from its mean value is qualitatively different in a metal and a semiconductor or insulator. In a metal the Coulomb potential of a particle is screened very effectively by the electron gas, and the long-range Coulomb potential is turned into a short-range interaction that depends on the local electron density. In a semiconductor or insulator the Coulomb potential is not completely screened by the electron gas. , an N + 1- rather than the original N-electron system).
4, panel (b). 13. 8. The dynamically screened interaction W introduces energy-dependent correlation effects. 6 the self-energy in terms of its bare-exchange and energy-dependent correlation or polarizati01-1~~ contribution. The bare-exchange contribution to C results from the bare Coulomb interaction, u(r, r’) = l/lr - r’J,whereas the energy-dependent correlation contribution results from W - u. Dynamic effects in the screening process are important since moving quasiparticles drag their polarization cloud behind them.