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By Y. Gianchandani, et al.
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Sample text
The deflection is achieved electrothermally by injecting a small heating current through a thin metallic layer on top of the flexible suspensions. The metallic layer acts as a heating resistor, converting the dissipated power into thermal heat, which increases the length of the suspensions slightly. The VCSEL is optically pumped and shows a continuous tuning range of 26 nm. The device has a free spectral range (FSR) of 47 nm and a side-mode suppression ratio of 57 dBm. 1 nm, resulting in a finesse of approximately 470, which is the ratio of FSR to FWHM.
Source: Reprinted from Sens. 2 Micromotors Though SiC has been established as a microelectronic material for use in high-temperature and high-power applications, attention has also been focused on developing microsystems due to the outstanding chemical and mechanical properties along with its piezoresistance. SiC exists in many different polytypes; of these, the cubic 3C–SiC and the hexagonal 6H–SiC and 4H–SiC have been studied for device applications. The 3C–SiC is the only polytype that can be grown in single-crystalline form on silicon.
This gas has to be diffused out by proper rotation of etching solvents without giving pressure to the releasing microstructures. The etching of semiconductors proceeds by the successive dissolution of layers of the materials. , in GaAs, the (111) Ga and (111) As faces have different etching rates. Because the As face has two dangling bonds per Compound Semiconductors Table 2 29 Sacrificial layer wet etching of compound semiconductors by addition of new materials Etch stop layer Sacrificial layer Etchant Etch rates (mm minÀ1), selectivity GaAs AlxGa1ÀxAs, x !