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Teather, L. Young, Solid State Electr. C. L. English, IEEE Trans. -Y. Wu, IEEE Trans. Electron Devices ED-21, 499 (1974) K. Sugibuchi, Y. Kurogi, N. Endo, J. Appl. Phys. 46, 2877 (1975) Y. Higuma, Y. Matsui, M. Okuyama, T. Nakagawa, Y. Hamakawa, in Proceedings of the 9th Conference on Solid State Devices, Tokyo (1977) 1 Features, Principles and Development of Ferroelectric-Gate FET 19 10. Y. Hamakawa, Y. Matsui, Y. Higuma, Y. C. (1977) 11. Y. Higuma, M. Okuyama, T. Nakagawa, Y. Hamakawa, in Proceedings of the 1st Conference on Ferroelectric Material Applications, Kyoto (1977) 12.
Hoffman, T. Mikolajick, IEEE Electron. Device Lett. 33, 185 (2012) 46. G. Naber, C. M. H. W. J. Touwslager, S. M. De Leeuw, Nat. Mater. 4, 243 (2005) 47. G. E. Park, J. Kor. Phys. Soc. 56, 1484 (2010) 48. T. Watanabe, H. Miyashita, T. Kanashima, M. Okuyama, Jpn. J. Appl. Phys. 49, 04DD14 (2010) 49. -H. Noh, W. S. Oh, S, Jang, E. Kim, Appl. Phys. Lett. 90(25), 253504 (2007) 50. Y. Kato, Y. Kaneko, H. Tanaka, Y. Shimada, Jpn. J. Appl. Phys. 47, 2719 (2008) 51. T. Fukushima, T. Yoshimura, K. Masuko, A.
75)/Si FeFET with L = 10 μm and W = 200 μm. Thicknesses in the gate stack were 200 nm Pt, 400 nm SBT and 13 nm HAO. b Vw − VSA extracted from the Id–Vg curves for various VSA. Modified from [11] Fig. 3 x dependence of static memory window at Vg = ±6 V of n-channel Pt/SBT/HAO(x)/Si FeFETs. Thicknesses in the gate stack were 200 nm Pt, 400 nm SBT and 14 nm HAO(x). The gate area sizes were L = 10 μm and W = 200 μm. Modified from [15] Fig. 8. Static memory window (Vw) of an FeFET was defined as a difference between two threshold voltage (Vth) values in the Id–Vg loop which were regarded as the Vg values at Id = 10−6 A for simplification in this work.