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By Leonard J. Brillson
A complicated point textbook masking geometric, chemical, and digital constitution of digital fabrics, and their purposes to units in accordance with semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions.
Starting with the basics of electric measurements on semiconductor interfaces, it then describes the significance of controlling macroscopic electric homes through atomic-scale options. next chapters current the wide variety of floor and interface recommendations on hand to signify digital, optical, chemical, and structural houses of digital fabrics, together with semiconductors, insulators, nanostructures, and organics. the fundamental physics and chemistry underlying every one process is defined in enough intensity with references to the main authoritative resources for extra exhaustive discussions, whereas various examples are supplied all through to demonstrate the functions of every technique.
With its normal examining lists, wide citations to the textual content, and challenge units appended to all chapters, this can be excellent for college kids of electric engineering, physics and fabrics technology. It both serves as a reference for physicists, fabric technology and electric and digital engineers desirous about floor and interface technological know-how, semiconductor processing, and gadget modeling and layout.
This is a coproduction of Wiley and IEEE
* unfastened options guide to be had for academics at www.wiley-vch.de/supplements/
Content:
Chapter 1 advent (pages 1–8):
Chapter 2 old heritage (pages 9–17):
Chapter three electric Measurements (pages 19–35):
Chapter four Interface States (pages 37–65):
Chapter five Ultrahigh Vacuum expertise (pages 67–82):
Chapter 6 floor and Interface research (pages 83–92):
Chapter 7 Photoemission Spectroscopy (pages 93–127):
Chapter eight Photoemission with smooth X?Rays (pages 129–145):
Chapter nine Particle–Solid Scattering (pages 147–168):
Chapter 10 Electron power Loss Spectroscopy (pages 169–182):
Chapter eleven Rutherford Backscattering Spectrometry (pages 183–196):
Chapter 12 Secondary Ion Mass Spectrometry (pages 197–212):
Chapter thirteen Electron Diffraction (pages 213–235):
Chapter 14 Scanning Tunneling Microscopy (pages 237–255):
Chapter 15 Optical Spectroscopies (pages 257–278):
Chapter sixteen Cathodoluminescence Spectroscopy (pages 279–304):
Chapter 17 digital fabrics' Surfaces (pages 305–326):
Chapter 18 Adsorbates on digital fabrics' Surfaces (pages 327–363):
Chapter 19 Adsorbate–Semiconductor Sensors (pages 365–382):
Chapter 20 Semiconductor Heterojunctions (pages 383–445):
Chapter 21 Metals on Semiconductors (pages 447–522):
Chapter 22 the way forward for Interfaces (pages 523–538):
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Additional info for Surfaces and Interfaces of Electronic Materials
Example text
Schottky, W. (1942) Z. , 118, 539. A. (1942) Radiation Laboratory Report No. 43–12, Massachusetts Institute of Technology, November. W. (1921) The Emission of Electricity from Hot Bodies, Longmans-Green, Harlow, Essex. M. (1981) Physics of Semiconductor Devices, 2nd edn, Chapter 3, Wiley-Interscience, New York. B. (1969) Tunneling in Solids, Academic Press, New York, pp. 102–110. G. (1980) Semiconductor Devices and Integrated Electronics, Academic Press, New York, pp. 156–200. 19. H. H. 20. 21.
W. , New York. W. S. (1990) Electronic Materials Science: for Integrated Circuits in Si and GaAs, Macmillan, New York. M. C. (1975) Phys. Rev. , 35, 56. M. C. (1975) CRC Crit. Rev. , 5, 405. J. (1978) Phys. Rev. , 40, 260. J. (1978) J. Vac. Sci. , 15, 1378. J. (1978) Phys. Rev. B, 18, 2431. F. J. (1981) Appl. Phys. , 39, 67. F. J. (1981) J. Vac. Sci. , 18, 787. F. J. (1981) J. Vac. Sci. , 19, 617. Y. (1980) Phys Rev. , 44, 420. 51. , 52. 53. 54. 55. 56. 57. 58. , and Lindau, I. (1988) J. Vac. Sci.
IPS can clearly show the dependence of Schottky barrier height on different metals. 11 illustrates the clear difference between barriers for metals on molecular beam epitaxy (MBE)-grown GaAs [25]. Such barrier differences are much larger than those commonly reported for melt-grown GaAs and can be explained by differences in crystal quality, deposition methods, and chemically-induced defects to be discussed in later chapters. For an authoritative review of IPS measurements of barrier heights, see [26].