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By J. Arrillaga, Y. H. Liu, N. R. Watson(auth.)
The advance of energy semiconductors with higher rankings and better features has intended that the ability has develop into extra keen to improve new converter configurations. those new configurations make the most of the better controllability and switching frequencies of the hot units. the following couple of years will come to a decision which of the proposed applied sciences will dominate destiny strength transmission platforms.
Flexible strength Transmission is a entire advisor to the excessive voltage direct present (HVDC) thoughts on hand, supporting the reader to make educated judgements for designing destiny strength transmission platforms. The publication contains:
- a complete description of the foundations and parts in latest converter know-how, in addition to replacement proposals for self-commutating conversion; A evaluation of the country of strength semiconductors suited for HVDC transmission and current proposals for multi-level HVDC transmission.
- a certain evaluation of the versatile HVDC tools for bettering controllability and extending strength move potential in electricity platforms.
- up-to-date details on thyrisistor-based HVDC expertise.
- coverage of latest pulse width modulation (PWM) transmission know-how and multi-level voltage resource conversion (VSC) and present resource conversion (CSC).
a great reference for pro energy engineers, Flexible energy Transmission can also be an invaluable consultant for energy method researchers in addition to academics and scholars in strength structures and gear electronics disciplines.Content:
Chapter 1 advent (pages 1–20):
Chapter 2 Semiconductor energy units (pages 21–56):
Chapter three Line?Commutated HVDC Conversion (pages 57–95):
Chapter four Self?Commutating Conversion (pages 97–126):
Chapter five Pulse Width Modulation (pages 127–140):
Chapter 6 Multi?Level Conversion (pages 141–167):
Chapter 7 Multi?Level DC Reinjection (pages 169–223):
Chapter eight Line?Commutated CSC Transmission (pages 225–274):
Chapter nine advancements in Line?Commutated HVDC Schemes (pages 275–290):
Chapter 10 VSC Transmission (pages 291–326):
Chapter eleven Multi?Level VSC and CSC Transmission (pages 327–357):
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Extra resources for Flexible Power Transmission: The HVDC Options
Example text
Turn-off cathode G1. turn-on n p n p anode (a) anode G1. turn-on G1. 5 MOS Controlled Thyristor (MCT) Again, the purpose of the MCT is to obtain faster turn-off capability and lower turn-off switching losses. The distinguishing feature of the MCT is the incorporation of MOSFETs into a cellular thyristor. Most of these are used to switch emitter shorts to block the forward voltage. These MOSFETs must, therefore, be switched off when the MCT is to be turned on. At the same time a smaller number of MOSFETs of opposite type are switched on.
E. fast switching with low on-state and switching losses, can be exploited in high-power static conversion. 6 Emitter Turn-Off Thyristor (ETO) The ETO, a promising new device for high-power applications, is reported to combine the high-voltage and high-current capability of the traditional thyristor and the easier gate controllability of the IGBT. The present voltage and current ratings are claimed to be 4500 V and 4000 A respectively. As compared with present competing technologies, the ETO offers improved performance in current conduction and turn-off speed, as well as snubberless turn-off current capability.
14) are usually connected in the anode circuit to equalise the ampere-turns of the parallel circuits. Finally, the conductor layout must be arranged to equalise the inductance and resistance of the individual devices placed in parallel. 2 Gate Turn-Off Thyristor (GTO) Gate-controlled thyristor turn-off, introduced in the late 1970s, made it possible to design self-commutating converters of larger power ratings. 15 [4], is a three-terminal device. The GTO switching, however, requires more complex gating and snubber circuits.