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By Uwe Bovensiepen, Hrvoje Petek, Martin Wolf
This two-volume paintings covers ultrafast structural and digital dynamics of straight forward procedures at reliable surfaces and interfaces, providing the present prestige of photoinduced techniques. supplying necessary introductory info for rookies to this booming box of analysis, it investigates recommendations and experiments, femtosecond and attosecond time-resolved tools, in addition to frequency area techniques.
the full is rounded off via a glance at destiny advancements.
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Extra resources for Dynamics at Solid State Surfaces and Interfaces: Current Developments, Volume 1
Example text
This extended interaction with high-q LO phonons deepens and narrows the self-induced potential trap and reduces significantly the polaron radius. As already discussed in the conclusion of Ref. [14], this leads to the counterintuitive result that the polaron binding energy, that is, the depth of the self-induced trap, increases with the temperature. Experimentally, it is very difficult to access any of the characteristic properties of the polaron at rest. For instance, strong magnetic fields have been applied to n-type semiconductor structures to measure the cyclotron resonance frequency [30].
T < 300 fs), however, the semiclassical Boltzmann transport equation fails and predicts wrong scenarios of high-field transport phenomena, as will be demonstrated in the experiments discussed in the following. In contrast, the presented polaron model, that is, Eqs. 10), provides correct predictions in the ultrafast time domain as well. 2 Femtosecond Nonlinear Terahertz and Mid-Infrared Spectroscopy Most of the THz experiments performed so far apply THz radiation as a linear probe. Studies of the nonlinear optical response and transport require THz fields of sufficient strength.
Both a high-field THz transient generated by four-wave mixing in a dry nitrogen plasma [44] and a synchronized midinfrared transient generated by difference frequency mixing in GaSe [38] are focused collinearly onto the sample, a 500 nm thick layer of Si-doped (n-type) GaAs with a carrier concentration of 1017 cmÀ3 (for details see Ref. [58]). After interaction with the sample, the time-dependent electric fields of the THz and MIR pulses are measured with electro-optic sampling in a thin ZnTe crystal [38].