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By Kwok K. Ng(auth.)
A definitive and updated instruction manual of semiconductor units
Semiconductor units, the elemental parts of built-in circuits, are answerable for the swift development of the electronics over the last fifty years. simply because there's a growing to be want for quicker and extra complicated structures for the data age, present semiconductor units are continually being studied for development, and new ones are being always invented. consequently, a great number of kinds and diversifications of units are available the literature. The Second Edition of this specified engineering consultant remains to be the one to be had entire number of semiconductor units, picking seventy four significant units and greater than 2 hundred adaptations of those units.
As within the First Edition, the worth of this article lies in its complete, but hugely readable presentation and its easy-to-use structure, making it compatible for a variety of audiences.
- Essential info is gifted for a fast, balanced review
- Each bankruptcy is designed to hide just one particular equipment, for simple and centred reference
- Each gadget is mentioned intimately, continuously together with its heritage, its constitution, its features, and its functions
The Second Edition has been considerably up to date with 8 new chapters, and the fabric rearranged to mirror fresh advancements within the box. As such, it continues to be an excellent reference resource for graduate scholars who need a fast survey of the sphere, in addition to for practitioners and researchers who want easy access to easy info, and a useful pragmatic guide for salespeople, attorneys, and an individual linked to the semiconductor industry.Content:
Chapter 1 p?n Junction Diode (pages 11–23):
Chapter 2 p?i?n Diode (pages 24–30):
Chapter three Schottky?Barrier Diode (pages 31–41):
Chapter four Planar?Doped?Barrier Diode (pages 42–48):
Chapter five Isotype Heterojunction (pages 49–56):
Chapter 6 Tunnel Diode (pages 57–63):
Chapter 7 Transferred?Electron equipment (pages 64–74):
Chapter eight Resonant?Tunneling Diode (pages 75–83):
Chapter nine Resonant?Interband?Tunneling Diode (pages 84–89):
Chapter 10 Single?Barrier Tunnel Diode (pages 90–94):
Chapter eleven Single?Barrier Interband?Tunneling Diode (pages 95–97):
Chapter 12 Real?Space?Transfer Diode (pages 98–102):
Chapter thirteen Metal?Insulator?Semiconductor swap (pages 103–110):
Chapter 14 Planar?Doped?Barrier change (pages 111–117):
Chapter 15 Amorphous Threshold change (pages 118–122):
Chapter sixteen Heterostructure Hot?Electron Diode (pages 123–126):
Chapter 17 Impact?Ionization?Avalanche Transit?Time Diode (pages 127–136):
Chapter 18 Barrier?Injection Transit?Time Diode (pages 137–144):
Chapter 19 Resistor (pages 145–150):
Chapter 20 Metal?Oxide?Semiconductor Capacitor (pages 153–163):
Chapter 21 Charge?Coupled gadget (pages 164–174):
Chapter 22 Metal?Oxide?Semiconductor Field?Effect Transistor (pages 175–190):
Chapter 23 Junction Field?Effect Transistor (pages 191–199):
Chapter 24 Metal?Semiconductor Field?Effect Transistor (pages 200–208):
Chapter 25 Modulation?Doped Field?Effect Transistor (pages 209–218):
Chapter 26 Permeable?Base Transistor (pages 219–224):
Chapter 27 Static?Induction Transistor (pages 225–233):
Chapter 28 Real?Space?Transfer Transistor (pages 234–241):
Chapter 29 Planar?Doped Field?Effect Transistor (pages 242–246):
Chapter 30 Surface?Tunnel Transistor (pages 247–251):
Chapter 31 Lateral Resonant?Tunneling Field?Effect Transistor (pages 252–255):
Chapter 32 Stark?Effect Transistor (pages 256–260):
Chapter 33 Velocity?Modulation Transistor (pages 261–265):
Chapter 34 Bipolar Transistor (pages 266–281):
Chapter 35 Tunneling Hot?Electron?Transfer Amplifier (pages 282–288):
Chapter 36 Metal?Base Transistor (pages 289–293):
Chapter 37 Bipolar Inversion?Channel Field?Effect Transistor (pages 294–301):
Chapter 38 Tunnel?Emitter Transistor (pages 302–308):
Chapter 39 Planar?Doped?Barrier Transistor (pages 309–313):
Chapter forty Heterojunction Hot?Electron Transistor (pages 314–317):
Chapter forty-one Induced?Base Transistor (pages 318–322):
Chapter forty two Resonant?Tunneling Bipolar Transistor (pages 323–328):
Chapter forty three Resonant?Tunneling Hot?Electron Transistor (pages 329–333):
Chapter forty four Quantum?Well?Base Resonant?Tunneling Transistor (pages 334–338):
Chapter forty five Spin?Valve Transistor (pages 339–345):
Chapter forty six Floating?Gate Avalanche?Injection Metal?Oxide?Semiconductor Transistor (pages 346–352):
Chapter forty seven Metal?Nitride?Oxide Semiconductor Transistor (pages 353–360):
Chapter forty eight Silicon?Controlled Rectifier (pages 361–378):
Chapter forty nine Insulated?Gate Bipolar Transistor (pages 379–384):
Chapter 50 Static?Induction Thyristor (pages 385–390):
Chapter fifty one Unijunction Transistor (pages 391–395):
Chapter fifty two Light?Emitting Diode (pages 396–407):
Chapter fifty three Injection Laser (pages 408–422):
Chapter fifty four Photoconductor (pages 423–430):
Chapter fifty five p?i?n Photodiode (pages 431–437):
Chapter fifty six Schottky?Barrier Photodiode (pages 438–445):
Chapter fifty seven Charge?Coupled photo Sensor (pages 446–453):
Chapter fifty eight Avalanche Photodiode (pages 454–461):
Chapter fifty nine Phototransistor (pages 462–469):
Chapter 60 Metal?Semiconductor?Metal Photodetector (pages 470–474):
Chapter sixty one Quantum?Well Infrared Photodetector (pages 475–480):
Chapter sixty two Quantum?Dot Infrared Photodetector (pages 481–485):
Chapter sixty three Blocked?Impurity?Band Photodetector (pages 486–490):
Chapter sixty four Negative?Electron?Affinity Photocathode (pages 491–499):
Chapter sixty five Photon?Drag Detector (pages 500–502):
Chapter sixty six Self?Electrooptic?Effect equipment (pages 503–506):
Chapter sixty seven Bistable Etalon (pages 507–512):
Chapter sixty eight sunlight mobile (pages 513–520):
Chapter sixty nine Electroabsorption Modulator (pages 521–527):
Chapter 70 Thermistor (pages 528–535):
Chapter seventy one corridor Plate (pages 536–543):
Chapter seventy two pressure Gauge (pages 544–550):
Chapter seventy three Interdigital Transducer (pages 551–556):
Chapter seventy four Ion?Sensitive Field?Effect Transistor (pages 557–563):
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Extra resources for Complete Guide to Semiconductor Devices, Second Edition
Example text
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White, "Semiconductor control devices: pin diodes," in K. , Handbook of microwave and optical components, Vol. 2, Wiley, New York, 1990. 8. F. F. , Electronics engineer's reference book, Butterworths, London, 1989. 9. P. D. Taylor, Thyristor design and realization, Wiley, New York, 1987. 10. A. , 11, 717 (1968). 11. S. C. Choo, "Effect of carrier lifetime on the forward characteristics of high-power devices," IEEE Trans. , ED-17, 647 (1970). Complete Guide to Semiconductor Devices, Second Edition by Kwok K.
2). The equivalent circuit for & p-n junction is shown in Fig. 6. Since capacitance is defined by dQ/dV, the depletion-layer capacitance Cd is associated with the depletion-layer charge, while the diffusion capacitance CD is related to injected carriers. 16) The Cd is determined by the depletion width, and for a one-sided step junction, r = _! 5 Transient current characteristics of a p-n junction when switched from forward to reverse direction. td and tlr are called delay time and transition t i m e , respectively.